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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC4960 description high collector-base breakdown voltage- : v (br)cbo = 900v(min) high switching speed applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ces collector-emitter voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 1 a i cm collector current-peak 2 a i b b base current-continuous 0.3 a collector power dissipation @ t c =25 40 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4960 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 800 v v ce (sat) collector-emitter saturation voltage i c = 0.2a; i b = 40ma 1.5 v v be (sat) base-emitter saturation voltage i c = 0.2a; i b = 40ma 1.0 v i cbo collector cutoff current v cb = 900v; i e = 0 50 a i ebo emitter cutoff current v eb = 7v; i c = 0 50 a h fe-1 dc current gain i c = 50ma; v ce = 5v 6 h fe-2 dc current gain i c = 0.5a; v ce = 5v 3 f t current-gain?bandwidth product i c = 50ma; v ce = 10v; f= 1mhz 4 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 0.2a; i b1 = 40ma, i b2 = -80ma; v cc = 250v 1.0 s isc website www.iscsemi.cn 2 |
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